Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

Published 2018 View Full Article

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Title
Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 8, Pages 3283-3290
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-07-31
DOI
10.1109/ted.2018.2848275

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