Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor

Published 2014 View Full Article

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Title
Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 11, Pages 3762-3767
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-10
DOI
10.1109/ted.2014.2359739

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