Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 1, Pages 140-146Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2228868
Keywords
Graphene FETs; negative differential resistance; nonequilibrium Green's function
Funding
- Italian Project PRIN [Prot. 2008S2CLJ9]
- EU [GRADE 317839]
- CINECA [HP10CPFJ69]
Ask authors/readers for more resources
In this paper, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs through nonequilibrium Green's function simulations and a simpler semianalytical ballistic model that captures the essential physics. This NDR phenomenon is due to a transport mode bottleneck effect induced by the graphene Dirac point in the different device regions, including the contacts. NDR is found to occur only when the gate biasing produces an n-p-n or p-n-p polarity configuration along the channel, for both positive and negative drain-source voltage sweep. In addition, we also explore the impact on the NDR effect of contact-induced energy broadening in the source and drain regions and a finite contact resistance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available