Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 4, Pages 1372-1378Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2248158
Keywords
AlInN/GaN HEMTs; dispersion effects; distributed time constants
Funding
- Genghis Khan Project in the Framework of the French Research National Agency
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Frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated in this paper. Broadband dispersion effects in the microwave frequency range are reported for the first time. A small-signal model is developed. Trapping effects are taken into account with parasitic electrical networks including distributed time constants. The model is compared with experimental data for several bias conditions and different types of dispersion.
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