Article
Engineering, Electrical & Electronic
Keyao Sun, Emma Raszmann, Jun Wang, Xiang Lin, Rolando Burgos, Dong Dong, Dushan Boroyevich
Summary: This article presents an improved control circuit for series connection of SiC MOSFETs, which achieves higher blocking voltage and resolves the voltage imbalance issue during switching transient. The proposed control method has been validated through modeling, analysis, and experimental results, demonstrating its potential for medium-voltage high-current applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Shan Jiang, Meng Zhang, Xianwei Meng, Xiang Zheng, Shiwei Feng, Yamin Zhang
Summary: In this article, a Bayesian deconvolution algorithm is used to optimize trap feature extraction of the SiC/SiO2 interface state in SiC MOSFETs. The trap position, energy level, and capture time constant are characterized. Three types of traps and defects are identified, including SiC interface traps at the gate-source and gate-drain interfaces with activation energies of 0.089 and 0.035 eV, respectively, and an oxide trap with temperature-independent time constant. The results are validated through deep-level transient spectroscopy and show reasonable agreement. This method can be used in nondestructive characterization of SiC MOSFET defects in long-term reliability research.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Materials Science, Ceramics
Chen Hu, Joseph F. F. Labuz, Takaaki Koyanagi, Jia-Liang Le
Summary: Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites are being considered as potential materials for fuel claddings in light water reactors. This study presents a probabilistic model for the lifetime distribution of SiC/SiC composites, anchored by a multiaxial stress-based failure criterion and subcritical damage accumulation mechanism. The analysis demonstrates the importance of understanding the static fatigue behavior and length effect on the failure probability of the cladding.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Engineering, Electrical & Electronic
Ajit Kanale, B. Jayant Baliga
Summary: By utilizing an enhancement mode MOSFET and reducing gate bias, the short-circuit withstand time of SiC power MOSFETs can be significantly improved, although there will be increases in on-resistance and switching loss.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Shiwei Liang, Yu Yang, Lei Shu, Ziyuan Wu, Bingru Chen, Hengyu Yu, Hangzhi Liu, Liang Wang, Tongde Li, Gaoqiang Deng, Jun Wang
Summary: In this article, a comprehensive model for predicting the degradation of SiC MOSFETs after gamma-ray irradiation is proposed. Experimental and simulation results demonstrate that the degradation behaviors of SiC MOSFETs under different bias conditions are caused by the differences in electric field and charge accumulation in the gate oxide. A parameter, threshold voltage (V-TH), is used to quantify the accumulated charges and predict the irradiation induced degradation. The proposed model shows high accuracy with a maximum prediction error lower than 0.08 V and can be useful for predicting the degradation and lifetime of SiC MOSFETs in irradiation environments.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Teruyuki Ohashi, Hiroshi Kono, Souzou Kanie, Takahiro Ogata, Kenya Sano, Hideki Hayakawa, Shunsuke Asaba, Shigeto Fukatsu, Ryosuke Iijima
Summary: This paper investigates the relationship between the maximum current density J(umax) and temperature in SBD-embedded SiC MOSFETs and develops an equivalent circuit model and analytical formula. By proposing guidelines and conducting experiments, J(umax) has been successfully improved. Additionally, the mechanisms behind the decrease in A max in high blocking voltage devices and at high temperature have been studied.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Chia-Lung Hung, Bing-Yue Tsui, Chun-Pin Shih, Te-Kai Tsai
Summary: This article reports the narrow-width effect (NWE) of 4H-SiC MOSFETs with LOCOSiC isolation and proposes a H2O diffusion and oxidation model to explain the growth of a long bird's beak. The problems caused by the long bird's beak and unusual NWE can be overcome by adjusting the overetching time and the thickness of the FOX layer.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Yang Wen, Yuan Yang, Yong Gao
Summary: High-power SiC MOSFETs are used in power electronics for their high switching speed and low losses. An active gate driver (AGD) is presented to balance currents in parallel-connected SiC MOSFET modules, using dynamic gate drive voltage adjustment to synchronize current edges and slopes. AGDs measure and control current individually, without the need for extra supervising control circuits.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Materials Science, Ceramics
Abolhassan Najafi, F. Golestani-Fard, H. R. Rezaie, Saviz Parsa Saeb
Summary: SiC-B4C nano powders were synthesized through sol-gel process in water-solvent-catalyst-dispersant system. The formation mechanism of the product during sol-gel process was evaluated using TEM, SEM, DTA/TG, BET, XRD, FTIR and DLS analysis methods. The nanoparticles had a high surface area and meso porous surfaces, with SiC-B4C particles in the range of 20-40 nm.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Roger Stark, Alexander Tsibizov, Neha Nain, Ulrike Grossner, Ivana Kovacevic-Badstuebner
Summary: This article provides a detailed analysis of the nonlinear voltage-dependent capacitances of vertical silicon carbide power MOSFETs, focusing on their role in fast switching transients. By examining different compact models and emphasizing the importance of considering the capacitance dependence on voltages V-gs and V-ds, the study aims to improve the accuracy and efficiency of automated design procedures for power electronics.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Automation & Control Systems
Xiao Long, Zhao Jun, Botao Zhang, Dongdong Chen, Wu Liang
Summary: This article presents a unified electrothermal behavior modeling method for SiC MOSFET and GaN HEMT, with a parameter extraction method based on modeling data and optimization algorithm. The proposed modeling method has been verified through simulation and experiment, showing its correctness and applicability to several commercially available devices.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Chemistry, Analytical
Ruoyu Wang, Jingwei Guo, Chang Liu, Hao Wu, Zhiyong Huang, Shengdong Hu
Summary: In this paper, a new 650V 4H-SiC trench MOSFET with HJD and double CSLs is proposed and studied, which can suppress the turn-on of parasitic body diode, improve the transistor performance, and reduce the on-state resistance and gate-drain capacitance by using CSLs with different doping concentrations.
Article
Engineering, Electrical & Electronic
Jose Orti Gonzalez, Olayiwola Alatise
Summary: This article presents a method for evaluating the implications of threshold voltage (VTH) drift from gate voltage stress in SiC MOSFETs, which uses Miller coupling to characterize the impact of bias temperature instability (BTI)-induced VTH shift. Unlike traditional BTI characterization methods, this approach considers the actual converter environment to study the implications of VTH shift, making it more relevant for applications engineers. Studies on temperature, recovery time, and stress polarity have been conducted on commercially available SiC MOSFETs.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Dingkun Ma, Guochun Xiao, Tongyu Zhang, Fengtao Yang, Mengyu Zhu, Tianshu Yuan, Liangjun Ma, Yongmei Gan, Laili Wang
Summary: This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The structure of the module is designed to stack the two power switches up and down with the cooling system and the decoupling circuit integrated inside. By optimizing the process flow and designing soldering fixtures, the feasibility of the process and the engineering margin is increased. Experiments and simulations show that the proposed SiC power module has good electrical and thermal performance, with reduced parasitic inductance, eliminated common-mode current, and improved voltage oscillation due to the integration of the decoupling circuit.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Rahul P. Ramamurthy, Naeem Islam, Madankumar Sampath, Dallas T. Morisette, James A. Cooper
Summary: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels that increase the current-carrying width of the MOS inversion layer, reducing specific channel resistance. This innovation is particularly beneficial in silicon carbide, where the mobility of the inversion layer is significantly lower than in silicon, allowing for reduced on-resistance in SiC power MOSFETs at blocking voltages below 1,000 V, meeting the needs of over 68% of applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
