Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 7, Pages 2353-2360Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2263386
Keywords
Device simulation; intraband tunneling; nanowire transistor; top-of-the-barrier (ToB) model
Funding
- Swiss National Science Foundation [PP00P2 133591]
- Swiss National Supercomputing Centre (CSCS) [s363]
- Swiss National Science Foundation (SNF) [PP00P2_133591] Funding Source: Swiss National Science Foundation (SNF)
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In this paper, we present a computationally efficient full-band method to determine the current characteristics of circular, gate-all-around nanowire (NW) FETs in the sub-10-nm regime. The well-established top-of-the-barrier model is extended to consider intraband tunneling through the Wentzel-Kramers-Brillouin approximation. The required electrostatic potential is obtained using a parabolic approximation for its radial component, thus reducing Poisson equation to an 1-D problem and the computational burden by several orders of magnitude. After validating the model with 3-D, full-band, atomistic quantum transport simulations, the properties of Si, Ge, and InAs NW FETs are studied as function of their diameter and gate length. It is found that below 10-nm gate lengths Si < 110 > NW transistors outperform Ge < 100 >, independently from their diameter. On the other hand, InAs < 100 > wires with diameters below 6 nm exhibit higher ON-currents than their Si counterparts.
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