Low-Frequency Noise in Schottky-Barrier-Based Nanoscale Field-Effect Transistors

A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity

(2011) N. Clément et al.   APPLIED PHYSICS LETTERS

CMOS Inverter Based on Schottky Source–Drain MOS Technology With Low-Temperature Dopant Segregation

(2011) Guilhem Larrieu et al.   IEEE ELECTRON DEVICE LETTERS

Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel

(2011) Nicolas Clément et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Charge Noise in Graphene Transistors

(2010) Iddo Heller et al.   NANO LETTERS

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

(2010) Fengnian Xia et al.   NANO LETTERS

One-by-one trap activation in silicon nanowire transistors

(2010) N. Clément et al.   Nature Communications

What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

(2008) Lode K. J. Vandamme et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge Noise in Liquid-Gated Single-Wall Carbon Nanotube Transistors

(2008) Jaan Männik et al.   NANO LETTERS