Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 12, Pages 3510-3518Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2219055
Keywords
Drain current model; junctionless nanowire transistors (JNTs); short-channel effects (SCEs); temperature dependence
Funding
- CAPES
- FAPESP
- CNPq
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This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short- channel devices down to 30 nm at different temperatures have been also used to validate the model.
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