Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

(2010) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Fermi level depinning at the germanium Schottky interface through sulfur passivation

(2010) Arun V. Thathachary et al.   APPLIED PHYSICS LETTERS

Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model

(2010) Ching-Huang Lu et al.   JOURNAL OF APPLIED PHYSICS

Ab initio study of Al–Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks

(2009) Blanka Magyari-Köpe et al.   JOURNAL OF APPLIED PHYSICS

Band alignment at metal-semiconductor and metal-oxide interfaces

(2009) John Robertson   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

(2008) Peter Broqvist et al.   PHYSICAL REVIEW B