Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 3, Pages 700-704Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2179549
Keywords
Thermal stability; zinc oxide (ZnO) thin-film transistors (TFTs)
Funding
- National Science Council of Taiwan [NSC 97-2221-E-006-241-MY3, NSC 100-3113-E-006-015]
- Display Technology Center, Industrial Technology Research Institute of Taiwan [100-C073]
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The effects of lithium (Li) doping on the performance of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. Li-doped ZnO films as channel layers are chemically prepared by spin coating the gel with an aqueous solution of zinc acetate dihydrate, Li nitrate, and ethanolamine. TFT devices fabricated with 2 at.% Li-doped films show a good field-effect mobility of 3.31 cm(2)/V.s, a subthreshold slope of 0.82 V/dec, and an ON-OFF current ratio of over 10(5). These TFT devices also show good thermal and electrical stability, which is mainly attributed to the compact surface morphology of the channel layer, small carrier concentration, and less oxygen deficiency, which reduces the interface electrical trapping at the gate insulator.
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