Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 11, Pages 3674-3677Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2163939
Keywords
High-k; LaAlO3; metal gate; Schottky source/drain; sulfur
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Gate-first high-k/metal-gate n-MOSFETs with a deep subnanometer (sub-nm) equivalent oxide thickness (EOT) of 0.58 nm were successfully fabricated with Schottky source/drain contacts using a low-temperature process. The key to achieving such a thin EOT is the use of a low-temperature process for the NiSi Schottky source/drain formation. A sulfur implantation technique was used to overcome the Schottky barrier height between Si and NiSi, which is the main problem in NiSi Schottky source/drain fabrication. The advantage of Schottky source/drain MOSFETs over conventional source/drain MOSFETs was successfully demonstrated.
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