Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With $\hbox{HfO}_{2}/\hbox{Dy}_{2}\hbox{O}_{3}$ Gate Stacks
Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With $\hbox{HfO}_{2}/\hbox{Dy}_{2}\hbox{O}_{3}$ Gate Stacks
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