Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer
Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer
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