Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

Published 2010 View Full Article

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Title
Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 1, Pages 74-79
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-11-19
DOI
10.1109/ted.2010.2088125

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