☆ 4.6 Article

Comparison of Methods to Bias Fully Depleted SOI-Based MOSFET Nanoribbon pH Sensors

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 58, Issue 6, Pages 1752-1760

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/TED.2011.2132134

Keywords

Capacitive coupling; floating gate; fully depleted silicon-on-insulator (SOI); ion-sensitive field-effect transistor (ISFET); pH sensor

Categories

Engineering, Electrical & Electronic Physics, Applied

Funding

Texas Instruments Inc.
Texas Analog Center of Excellence

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Abstract

The potential and electric field boundary conditions for the Gouy-Chapman model of the electrolyte diffuse layer are used to properly couple the potentials in the silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor to the electrolyte. This analysis is possible because the active silicon channel is fully depleted. Both the subthreshold and linear regimes are simulated. An operation with electrolyte floating and bias applied to the substrate is compared with the other methods of biasing the sensor.

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