Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

Authors

Keywords

Journal

Volume 57, Issue 10, Pages 2504-2514

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2010-09-21

DOI

10.1109/ted.2010.2063191

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