Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 9, Pages 2335-2338Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2054530
Keywords
Flash memory; multilevel states in a cell (MLC); NOR; silicon-oxide-nitride-oxide-silicon (SONOS)
Funding
- Ministry of Education
- National Science Council, Taiwan [NSC-97-2221-E-009-152-MY3]
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For the first time, a high-performance (tau(PGM) = 200 ns/tau(ERS) = 5 ms) cell with superior reliability characteristics is demonstrated in a NOR-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V-TH distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.
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