CMOS Open-Gate Ion-Sensitive Field-Effect Transistors for Ultrasensitive Dopamine Detection

Title
CMOS Open-Gate Ion-Sensitive Field-Effect Transistors for Ultrasensitive Dopamine Detection
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 10, Pages 2761-2767
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-08-25
DOI
10.1109/ted.2010.2063330

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