The High-Mobility Bended n-Channel Silicon Nanowire Transistor

Published 2010 View Full Article

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Title
The High-Mobility Bended n-Channel Silicon Nanowire Transistor
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 4, Pages 866-876
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-02-17
DOI
10.1109/ted.2010.2040939

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