Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants

Published 2010 View Full Article

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Title
Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 4, Pages 795-803
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-03-02
DOI
10.1109/ted.2010.2041859

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