4.6 Article

High-Density MIM Capacitors With Porous Anodic Alumina Dielectric

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 10, Pages 2679-2683

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2058350

Keywords

Capacitor; high-kappa; metal-insulator-metal (MIM); porous anodic alumina; radio frequency (RF)

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We report on the fabrication and electrical characterization of MIM capacitors using as dielectric a thin porous anodic alumina layer between two Al films. The Al(2)O(3)/Al stack is grown electrochemically by partly anodizing an Al film on Si, while a top Al film is then deposited on the aluminum oxide and patterned in order to define the capacitor area. The obtained MIM capacitors exhibit at the same time large capacitance density (above similar to 5 fF/mu m(2)), low leakage current density (below similar to 10(-9) A/cm(2) at 2 V), and good thermal stability of operation, demonstrated by an alpha coefficient that changes by less than 10% for temperature changes of the order of 100 K. The temperature stability is further demonstrated by the low leakage current density (below similar to 7 x 10(-9) A/cm(2)) even at temperatures as high as 420 K.

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