Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 6, Pages 1235-1242
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-05-12
DOI
10.1109/ted.2009.2018713

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.