Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance

Published 2009 View Full Article

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Title
Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 2, Pages 343-347
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-01-21
DOI
10.1109/ted.2008.2011679

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