Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 3, Pages 361-364Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2011849
Keywords
Amplifier distortion; cross modulation distortion; epitaxial layers; GaN high-electron mobility transistor (HEMT); intermodulation distortion
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This paper presents an effective method of improving the linearity of GaN/AlGaN high-electron mobility transistors (HEMTs) by optimizing barrier (AlGaN Layer) thickness or implementing doped GaN cap or a combination of both. HEMT devices with different epitaxial structures were simulated, fabricated, and measured to demonstrate this. Third-order intermodulation distortion and adjacent channel power ratio measurements were performed in order to compare linearity experimentally. A significant improvement of linearity is observed for an optimized architecture.
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