Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs

Published 2008 View Full Article

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Title
Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 7, Pages 1702-1707
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-06-17
DOI
10.1109/ted.2008.924438

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