Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 8, Pages 1970-1976Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.926667
Keywords
drift-diffusion (DD) model; field-effect transistor (FET); nonequilibrium Green function formalism (NEGF); beta-silicon carbide (SiC) nanowires (NWs)
Funding
- National Research Foundation of Korea [과C6B1912] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Experimental and simulated I-V characteristics of silicon carbide (SiC) nanowire-based field-effect transistors (NWFETs) are presented. SiC NWs were fabricated by using the vapor-liquid-solid mechanism in a chemical vapor deposition system. The diameter of fabricated SiC NWs varied from 60 up to 100 mu while they were some micrometers long. Their I-V characteristics were simulated with SILVACO software, and special attention was paid to explore the role of NW doping level and NW/dielectric interface quality. The fabricated SiC-based NWFETs exhibit a mediocre gating effect and were not switched-off by varying the gate voltage. Based on the simulations, this is a result of the high unintentional doping (estimated at 1 x 10(19) cm(-3)) and the poor NW/dielectric interface quality. Moreover, a homemade algorithm was used to investigate the ideal properties of SiC-based NWFETs in ballistic transport regime, with NW lengths of 5-15 nm and a constant diameter of 4 nm for which the carrier transport is fully controlled by quantum effects. This algorithm self-consistently solves the Poisson equation with the quantum nonequilibrium Green function formalism. In the ballistic regime, devices with undoped SiC NWs exhibit superior theoretical performances (transconductance: similar to 43.2 x 10(-6) A/V and I-ON/I-OFF = 1.6 x 10(5) for a device with 9-nm NW length) based on their simulated characteristics.
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