A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

Published 2008 View Full Article

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Title
A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 8, Pages 2187-2194
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-08-01
DOI
10.1109/ted.2008.926735

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