Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations

Published 2008 View Full Article

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Title
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 11, Pages 3063-3069
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-11-12
DOI
10.1109/ted.2008.2005161

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