Dielectric Breakdown of $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{HfO}_{2}$ Bi-Layer Gate Dielectric

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

(2012) Pedro C. Feijoo et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Extremely Scaled (${\sim}0.2$ nm) Equivalent Oxide Thickness of Higher-$k$ ($k = 40$) HfO$_{2}$ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing

(2012) Yukinori Morita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effects of Positive and Negative Stresses on III–V MOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

(2011) N. Wrachien et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of Direct-Contact Higher-$k$ HfO$_{2}$ Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing

(2011) Yukinori Morita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gate stack insulator breakdown when the interface layer thickness is scaled toward zero

(2010) Jordi Suñé et al.   APPLIED PHYSICS LETTERS

Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics

(2009) Byoung Hun Lee et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

(2009) Jordi Sune et al.   IEEE ELECTRON DEVICE LETTERS

On Voltage Acceleration Models of Time to Breakdown—Part I: Experimental and Analysis Methodologies

(2009) Ernest Y. Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks

(2008) Yukinori Morita et al.   Applied Physics Express