Effect of the Interfacial $\hbox{SiO}_{2}$ Layer in High-$k$$ \hbox{HfO}_{2}$ Gate Stacks on NBTI

Published 2008 View Full Article

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Title
Effect of the Interfacial $\hbox{SiO}_{2}$ Layer in High-$k$$ \hbox{HfO}_{2}$ Gate Stacks on NBTI
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 8, Issue 1, Pages 47-61
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-03-13
DOI
10.1109/tdmr.2008.916294

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