4.7 Article

Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps

Journal

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2012.2215700

Keywords

Active-RC filter; adaptive bias; analog integrated circuits; buffer; continuous-time filter; high power-efficiency; operational amplifier; opamp; pole-cancellation; push-pull; source follower; ultra-low power; ultra-wideband

Funding

  1. National Natural Science Foundation of China (NSFC) [61106023]
  2. Postdoctoral Science Foundation of China [20100480109]

Ask authors/readers for more resources

This paper presents a generic-purpose solution of highly power-efficient active-RC filters, which is suitable for analog baseband with wide bandwidth-range from several mega-Hz to hundreds of mega-Hz in wireless receivers. A 260 mu A 7-20 MHz 6th-order active-RC low-bandwidth low-pass filter (LBW-LPF) and a 2.3 mA 240-500 MHz 6th-order active-RC high-bandwidth low-pass filter (HBW-LPF) are implemented in a standard 0.18 mu m CMOS process to demonstrate this versatile solution. Highly power-efficient push-pull opamps with 30-to-35 dB gain are adopted for the filters, which allow us to focus on extending the bandwidth and reducing the power consumption. The push-pull opamp with adaptive-biased and pole-cancellation push-pull source follower (APP-SF) as the buffer stage is proposed to greatly reduce the power consumption and effectively extend the bandwidth. An adaptive bias mechanism is also proposed to tolerate the PVT variations for the opamps. In addition, the GBW compensation and the Q-degrading scheme are adopted to relax the opamp GBW requirement, further reducing the power dissipation. The LBW-LPF only consumes 260 mu A current from 1.8 V supply, achieves 14.4 dBm in-band IIP3 and 66.2 nV/root Hz IRN density, and occupies 0.21 mm(2) silicon area without pads. The HBW-LPF merely dissipates 2.3 mA current from 1.8 V supply, achieves 11.3 dBm in-band IIP3 and 13.1 nV/root Hz IRN density, and occupies 0.23 mm(2) silicon area without pads.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available