Article
Chemistry, Physical
Ziling Cai, Xiyao He, Kaikai Wang, Xin Hou, Yang Mei, Leiying Ying, Baoping Zhang, Hao Long
Summary: This study fabricates Ga2O3-based UVCPDs with an interdigitated structure and achieves ultrafast response times and enhanced responsivity. The length of carrier collection is increased by adding the electrode structure. Under bias, the performances are significantly improved by enhancing the built-in electric field. Additionally, the intrinsic enhancing mechanism of the interdigitated structure is investigated.
Article
Physics, Applied
Haochen Zhang, Fangzhou Liang, Kang Song, Chong Xing, Danhao Wang, Huabin Yu, Chen Huang, Yue Sun, Lei Yang, Xiaolong Zhao, Haiding Sun, Shibing Long
Summary: This study demonstrates a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration, showing superior photodetection performance, especially under 265nm illumination. The gate-bias and band structure analysis play important roles in improving the device's photoresponse, paving the way for next-generation UVPTs.
APPLIED PHYSICS LETTERS
(2021)
Review
Materials Science, Multidisciplinary
Urvashi Varshney, Neha Aggarwal, Govind Gupta
Summary: The COVID-19 pandemic has led to increased use of UV-C sterilizing devices to combat the virus, but prolonged exposure to UV-C can have harmful effects on the environment and human health. It is crucial to monitor UV-C exposure intensity and limit radiation, while developing highly sensitive solar-blind UV photodetectors to mitigate potential health risks.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Optics
Guansen Huang, Chunshuang Chu, Long Guo, Zupin Liu, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, Dabing Li
Summary: In this work, a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector was proposed and fabricated, which exhibits low dark current and high responsivity. The fully depleted Ga2O3 layer with Schottky contact of Ni/Ga2O3 enables efficient carrier transport by pushing the photo-induced electrons into the GaN layer. The device achieves a significantly high photo-to-dark current ratio and demonstrates quick rise and fall times.
Article
Physics, Applied
Rongrong Chen, Di Wang, Xinyu Han, Bo Feng, Hongyan Zhu, Caina Luan, Jin Ma, Hongdi Xiao
Summary: PIN-type self-powered deep ultraviolet (DUV) photodetectors (PDs) based on Ta doped n-Ga2O3/i-Ga2O3/p-GaN structures with different i-Ga2O3 layer thicknesses were prepared. Among them, the PD with an i-layer thickness of c.30 nm showed the best response performance. This research provides an improved and easy method for fabricating high-performance self-powered DUV PDs.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Ping-Feng Chi, Feng-Wu Lin, Ming-Lun Lee, Jinn-Kong Sheu
Summary: In this study, beta-Ga2O3/GaN-based solar-blind phototransistors were fabricated through a thermal oxidation process. The thermal-oxidized beta-Ga2O3 films exhibited a high-resistivity property and a (201)-orientated crystal phase. The HPTs showed a distinct cut-off wavelength and a bias-dependent responsivity.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Multidisciplinary Sciences
Seung-Hye Baek, Gun-Woo Lee, Chu-Young Cho, Sung-Nam Lee
Summary: This study demonstrates gate-controlled amplifiable ultraviolet phototransistors using AlGaN/GaN HEMTs with very thin AlGaN barriers. The thickness of the AlGaN barrier affects the dark current and photocurrent differently, and the gate bias has different effects on the phototransistor depending on the AlGaN barrier thickness.
SCIENTIFIC REPORTS
(2021)
Article
Physics, Applied
Lei Yang, Haochen Zhang, Yue Sun, Kunpeng Hu, Zhanyong Xing, Kun Liang, Shi Fang, Danhao Wang, Huabin Yu, Yang Kang, Haiding Sun
Summary: In this study, we investigated the temperature-dependent photodetection behavior of a high-performance AlGaN/GaN-based ultraviolet phototransistor (UVPT). The optimal operating temperature for this UVPT is found to be 50°C, where it exhibits high responsivity and short response time. Moreover, the responsivity of this UVPT remains superior to earlier reported UV photodetectors even at high temperatures.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
Qifeng Lyu, Huaxing Jiang, Kei May Lau
Summary: The study demonstrates the first integration of monolithically integrated UV LEDs and visible-blind UV PDs on Si substrate, achieving high sensitivity and low dark current. By optimizing the structure and materials, it offers potential for various applications with high-performance UV PDs and LEDs.
Article
Nanoscience & Nanotechnology
Ping-Feng Chi, Feng-Wu Lin, Ming-Lun Lee, Jinn-Kong Sheu
Summary: This article demonstrates solar-blind photodetectors composed of Ga2O3/p-GaN bipolar heterojunctions formed through thermal oxidation and silicon ion implantation processes. The experimental results show that the thermal oxidation process converts p-GaN into semi-insulating β-Ga2O3 films, while silicon ion implantation transforms the insulating properties into n-type β-Ga2O3 with low resistivity and high electron concentration. The fabricated PDs exhibit high photoresponses in the solar-blind band.
Article
Physics, Applied
Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan
Summary: This research presents a p-GaN gate AlGaN/GaN high electron mobility transistor with a beta-Ga2O3 back barrier and investigates its electrical characteristics. The use of a Ga2O3 back barrier increases the threshold voltage of the device and decreases the off-state leakage current level. Additionally, the thickness of the beta-Ga2O3 back barrier has an impact on the threshold voltage and leakage current.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Urvashi Varshney, Anuj Sharma, Pargam Vashishtha, Lalit Goswami, Govind Gupta
Summary: This study developed a self-driven, low bias, and spectrally broad-responsive BBUV photodetector using a thermal oxidation process. The fabricated device demonstrated ultrahigh responsivity, external quantum efficiency, and low noise equivalent power in different operating modes. This research is significant for creating next-generation optoelectronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
Xiaobin Zou, Dongyu Xie, Yong Sun, Chengxin Wang
Summary: High-quality β-Ga2O3 nanobelts with ultra-thin thickness and length up to several hundred micrometers were successfully synthesized through a catalyst-free chemical vapor deposition method using β-Ga2O3 nanowires as mediators. The resulting microdevice exhibited superior optoelectric properties, including ultra-low dark current, high responsivity, and high spectral selectivity under low voltage. Furthermore, the performance of the device remained robust at elevated temperatures above 573 K, indicating its potential for low-voltage driven deep ultraviolet photodetectors with good sensitivity and stability in harsh environments.
Article
Materials Science, Multidisciplinary
Guowei Li, Kun Zhang, Yutong Wu, Xi Zhu, Xie Fu, Liang Wang, Shuanglong Feng, Wenqiang Lu
Summary: Ultrafine beta-Ga2O3 nanowires were synthesized and used as the interlayer in a self-powered solar-blind photodetector. The Ga2O3 nanowires served as vital spectral-selective materials for the solar-blind band. The device incorporating a cluster of Ga2O3 nanowires exhibited a responsivity 44 times greater than that of the PEDOT:PSS/Si heterojunction device at a wavelength of 250 nm.
Article
Physics, Applied
Mei Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan
Summary: The improved e-mode AlGaN/GaN HEMT with a gate stack beta-Ga2O3/p-GaN structure outperforms the conventional p-GaN gate HEMT, mainly due to the use of the beta-Ga2O3 layer which reduces the electric field strength in the gate region and decreases off-state leakage current. Additionally, there is a trade-off between the thickness of the beta-Ga2O3 layer and the performance of the device.
JOURNAL OF APPLIED PHYSICS
(2021)
