Journal
IEEE SENSORS JOURNAL
Volume 11, Issue 9, Pages 1795-1799Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2011.2104947
Keywords
(AlxGa1-x)(2)O-3; Ga2O3; UV photodetectors
Funding
- Center for Frontier Materials and Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center, National Cheng Kung University
- Ministry of Education, TAIWAN
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [98-D0204-6]
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The authors report the conversion of AlGaN epitaxial layer into (AlxGa1-x)(2)O-3 thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (AlxGa1-x)(2)O-3 photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.
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