Journal
IEEE SENSORS JOURNAL
Volume 11, Issue 11, Pages 2902-2905Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2011.2146770
Keywords
a-IGZO; solar-blind ultraviolet (UV) photodetctor; Ta2O5; thin-film-transistor (TFT)
Funding
- Center for Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center, NCKU under Ministry of Education, Taiwan
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [98-D0204-6]
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The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5cm(2)/vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 x 10(-9) A to 5.56 x 10(-5) A, as we illuminated the sample with lambda = 250 nm UV light when V-G was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 x 10(6) for the fabricated Ta2O5/a-IGZO TFT.
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