Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 26, Issue 11, Pages 1120-1123Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2014.2314140
Keywords
Diode lasers; semiconductor lasers; DBR; Y-branch; Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS; 785 nm
Funding
- Federal Ministry of Education and Research [DiLaRa 16SV2332]
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A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector Y-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25 degrees C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width <= 10 pm (<= 0.5 cm(-1)) and a spectral distance of 0.62 nm (<= 10.1 cm(-1)).
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