Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 25, Issue 18, Pages 1770-1773Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2013.2275195
Keywords
Al doped-MgZnO; bandgap modultion; deep UV LEDs; MgBeZnO active layer
Funding
- Advanced Optoelectronic Technology Center of the National Cheng Kung University
- National Science Council of Taiwan [NSC-99-2221-E006-106-MY3, NSC-99-2221-E006-208-MY3]
Ask authors/readers for more resources
Triple targets of MgO, Be, and Zn and double targets of MgO and Al-doped ZnO were used to deposit i-Mg0.047Be0.083Zn0.870O films and n-MgZnO:Al films in a magnetron radio frequency co-sputter system. The optical energy bandgap of the i-Mg0.047Be0.083Zn0.870O films and n-MgZnO: Al films were 3.51 and 3.75 eV, respectively. The electron concentration and mobility of the n-MgZnO: Al films were 5.10 x 10(21) cm(-3) and 2.30 cm(2)/V.s, respectively. The i-Mg0.047Be0.083Zn0.870O film and n-MgZnO: Al films were sequentially deposited on a p-GaN layer for fabricating p-i-n ultraviolet light-emitting diode heterostructures. The peak emission wavelength of the resulting ultraviolet light-emitting diodes was ranging from 352.8 to 362.6 nm, when the injection current increased from 5 to 80 mA.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
