Article
Chemistry, Physical
Ziling Cai, Xiyao He, Kaikai Wang, Xin Hou, Yang Mei, Leiying Ying, Baoping Zhang, Hao Long
Summary: This study fabricates Ga2O3-based UVCPDs with an interdigitated structure and achieves ultrafast response times and enhanced responsivity. The length of carrier collection is increased by adding the electrode structure. Under bias, the performances are significantly improved by enhancing the built-in electric field. Additionally, the intrinsic enhancing mechanism of the interdigitated structure is investigated.
Article
Optics
Guansen Huang, Chunshuang Chu, Long Guo, Zupin Liu, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, Dabing Li
Summary: In this work, a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector was proposed and fabricated, which exhibits low dark current and high responsivity. The fully depleted Ga2O3 layer with Schottky contact of Ni/Ga2O3 enables efficient carrier transport by pushing the photo-induced electrons into the GaN layer. The device achieves a significantly high photo-to-dark current ratio and demonstrates quick rise and fall times.
Article
Chemistry, Physical
Ping-Feng Chi, Feng-Wu Lin, Ming-Lun Lee, Jinn-Kong Sheu
Summary: In this study, beta-Ga2O3/GaN-based solar-blind phototransistors were fabricated through a thermal oxidation process. The thermal-oxidized beta-Ga2O3 films exhibited a high-resistivity property and a (201)-orientated crystal phase. The HPTs showed a distinct cut-off wavelength and a bias-dependent responsivity.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
Meijiao Xing, Dayong Jiang, Man Zhao
Summary: A new sandwich-structured photodetector (SSPD) was designed and fabricated to solve the problem of weak light detection in traditional metal-semiconductor-metal (MSM) photodetectors. A high external quantum efficiency (EQE) was achieved by growing Ga2O3 film layer on the electrode area of the ZnO/Au MSM-structured device. The ZnO/Au/Ga2O3 SSPD showed an EQE of up to 11626% at 30 V, which is 18 times higher than the traditional ZnO/Ga2O3/Au PD.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Ping-Feng Chi, Feng-Wu Lin, Ming-Lun Lee, Jinn-Kong Sheu
Summary: This article demonstrates solar-blind photodetectors composed of Ga2O3/p-GaN bipolar heterojunctions formed through thermal oxidation and silicon ion implantation processes. The experimental results show that the thermal oxidation process converts p-GaN into semi-insulating β-Ga2O3 films, while silicon ion implantation transforms the insulating properties into n-type β-Ga2O3 with low resistivity and high electron concentration. The fabricated PDs exhibit high photoresponses in the solar-blind band.
Article
Engineering, Electrical & Electronic
Urvashi Varshney, Anuj Sharma, Pargam Vashishtha, Lalit Goswami, Govind Gupta
Summary: This study developed a self-driven, low bias, and spectrally broad-responsive BBUV photodetector using a thermal oxidation process. The fabricated device demonstrated ultrahigh responsivity, external quantum efficiency, and low noise equivalent power in different operating modes. This research is significant for creating next-generation optoelectronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Wei Mi, Jinze Tang, Xinrong Chen, Xinwei Li, Bingkun Li, Liyuan Luo, Liwei Zhou, Rongrong Chen, Di Wang, Jinshi Zhao
Summary: PIN-structured photodiodes were fabricated by sputtering intrinsic-Ga2O3 and n-Ga2O3 with Ti doping on p-Si substrates. The fabricated Ga2O3 films were amorphous, and the roughness increased with Ti doping concentration. The photodiodes showed high reverse breakdown voltages, significant photoelectric response to 254 nm UV light, and high responsivity at -10 V bias.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Jinjin Wang, Xueqiang Ji, Zuyong Yan, Xu Yan, Chao Lu, Zhitong Li, Song Qi, Shan Li, Xiaohui Qi, Sai Zhang, Shengrun Hu, Peigang Li
Summary: Ga2O3 thin films were successfully prepared by one-step thermal oxidation of p-GaN thin films. The photodetector showed significantly reduced dark current and maintained the same order of magnitude of photocurrent, resulting in a large photo-to-dark current ratio. The device also exhibited high responsivity, super high external quantum efficiency, large detectivity, and fast response speed. The results demonstrate that the one-step thermal oxidation method is effective for preparing devices with high sensitivity, fast response, and high-resolution detection.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Materials Science, Multidisciplinary
Urvashi Varshney, Anuj Sharma, Lalit Goswami, Jai Tawale, Govind Gupta
Summary: In this study, we reported the unique beta-Ga2O3 nanoscale-strips morphology formed by thermal oxidation and developed a self-powered photodetector with a wide spectral range. The device exhibited excellent responsivity and performance under different light illuminations. The simple architecture of the device opens up new possibilities for the fabrication of next-generation Ga2O3-based broadband photodetection devices.
Article
Crystallography
Ruifan Tang, Guanqi Li, Xun Hu, Na Gao, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang
Summary: This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga2O3/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga2O3/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga2O3/GaN film. The responsivity was over 1500 A/W for the 270-360 nm band at 7 V. Moreover, the responsivity was further increased to 2.65 x 10(4) A/W for 365 nm and over 1.5 x 10(4) A/W for 270-360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga2O3/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga2O3 surface and Ga2O3/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.
Article
Physics, Applied
Gaohui Shen, Zeng Liu, Chee-Keong Tan, Mingming Jiang, Shan Li, Yufeng Guo, Weihua Tang
Summary: A solar-blind UV photodetector array based on a metalorganic chemical vapor deposition-grown beta-Ga2O3 thin film is fabricated for optical communication application. The device demonstrates high performance with a significant photo-to-dark current ratio, high responsivity, high external quantum efficiency, high specific detectivity, and fast response time. The array shows good spectral selectivity and low background noise, enabling effective outputting of information signals in optical communication.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Guanqi Li, Ruifan Tang, Na Gao, Cheng Li, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang
Summary: The research shows that devices fabricated with Au electrodes have lower dark current and higher photocurrent compared to those with Ti electrodes. Devices oxidized for 10 hours with Au electrodes exhibit solar-blind responsivity with a full width at half maxima of 12 nm, attributed to the thicker Ga2O3 film.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Rongrong Chen, Di Wang, Bo Feng, Hongyan Zhu, Xinyu Han, Jin Ma, Hongdi Xiao, Caina Luan
Summary: Ultra-wideband gap β-Ga2O3 epitaxial thin films with Ta-doping concentration of 0-0.9 at.% were grown on porous p-type GaN substrates via MOCVD. The crystalline quality of β-Ga2O3 thin films was improved by controlling the doping concentration, with the film doped with 0.23 at.% Ta showing the highest crystalline quality. A self-powered deep ultraviolet (DUV) detector based on the β-Ga2O3 film with the highest crystal quality exhibited excellent photoresponse under 222 nm UV light, with high responsivity, photo-dark current ratio, detectability, and low rise/fall time. This study presents a novel method for fabricating high-performance self-powered DUV photodetectors based on Ga2O3 epitaxial films.
Article
Physics, Applied
Rongrong Chen, Di Wang, Xinyu Han, Bo Feng, Hongyan Zhu, Caina Luan, Jin Ma, Hongdi Xiao
Summary: PIN-type self-powered deep ultraviolet (DUV) photodetectors (PDs) based on Ta doped n-Ga2O3/i-Ga2O3/p-GaN structures with different i-Ga2O3 layer thicknesses were prepared. Among them, the PD with an i-layer thickness of c.30 nm showed the best response performance. This research provides an improved and easy method for fabricating high-performance self-powered DUV PDs.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Yang Chen, You Wu, Jianwei Ben, Ke Jiang, Yuping Jia, Shanli Zhang, Hang Zang, Zhiming Shi, Bin Duan, Xiaojuan Sun, Dabing Li
Summary: A new type of ultraviolet photodetector was fabricated by integrating GaN nanoparticles as the absorber and graphene as the carrier transport channel. The GaN nanoparticles provide trap states for the photo-generated hole, while graphene has high carrier mobility, leading to improved detector performance. This combination results in a UV photodetector with high responsivity and persistent photoconduction effect.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
