Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 23, Pages 2155-2158Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2223666
Keywords
Distributed-feedback lasers; evanescent coupling; heterogeneous integration; silicon photonics
Funding
- Intel Corporation
- European Commission under ERC-Grant ULPPIC
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A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm, is presented. An output power of similar to 2.85 mW is obtained in a continuous wave regime at 10 degrees C. The threshold current is 20 mA and a sidemode suppression ratio of 45 dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide, while a specially developed bonding procedure yields 40-nm-thick adhesive bonding layers, enabling efficient evanescent coupling.
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