Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 23, Issue 4, Pages 218-220Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2010.2096205
Keywords
Detectivity; GaAsSb; InGaAs; mid-wavelength infrared (MWIR); photodiode; type-II multiple quantum wells (MQWs)
Funding
- Army Research Office
- National Science Foundation [0912672, 0907236]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907236] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [0912672] Funding Source: National Science Foundation
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An InP-based p-i-n photodiode with optical response out to 3.4 mu m was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In(0.34)Ga(0.66)As/5-nm GaAs(0.25)Sb(0.75) quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm(2) under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 X 10(8) cm . Hz(1/2) . W(-1) at 3 mu m at 290 K.
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