4.5 Article

Mechanism Investigation of p-i-n ZnO-Based Light-Emitting Diodes

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 1, Pages 30-32

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2035521

Keywords

Cosputtering; vapor cooling condensation system; zinc oxide (ZnO) light-emitting diodes (LEDs)

Funding

  1. National Science Council of Taiwan [NSC-98-NU-E-006-018]
  2. National Cheng Kung University's Top-University Project

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Using a cosputtering technique to deposit P-ZnO:AlN film and using a vapor cooling condensation system to deposit n-ZnO:In and i-ZnO films on sapphire substrates, thin-film-type ZnO-based light-emitting diodes (LEDs) were fabricated. A Nd:YAG laser with a wavelength of 413 nm is utilized to identify the defect-related emissions of p-ZnO, i-ZnO, and n-ZnO films. The characteristics of i-ZnO layer of ultraviolet (UV) emissions were analyzed using temperature-dependent photoluminescence. The mechanism of the UV electroluminescence emission peak at 3.20 eV observed from the p-i-n ZnO-based LEDs were attributed to the low deep-level defects and the radiative recombination occurred in the i-ZnO layer.

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