☆ 4.5 Article

InxGa1-xN-GaN-Based Solar Cells With a Multiple-Quantum-Well Structure on SiCN-Si(111) Substrates

IEEE PHOTONICS TECHNOLOGY LETTERS (2010)

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

Volume 22, Issue 4, Pages 215-217

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/LPT.2009.2037436

Keywords

Air mass 1.5 global solar spectrum; fill factors (FFs); multiple-quantum-well (MQW); open-circuit voltages (V-oc); photovoltaic efficiency; short-circuit current densities (J(sc))

Funding

National Science Council, Taiwan, R.O.C. [NSC96-2221-E-274-012, NSC-97-2215-E-274-003, NSC98-2221-E-274-011]

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Abstract

In this letter, I describe an effective method of obtaining a high photovoltaic efficiency of InxGa1-xN-GaN-based solar cells with a multiple-quantum-well (MQW) structure using a SiCN-Si (111) substrate. The MQW region had a higher solar cell absorption than the non-MQW InxGa1-xN-GaN sample. Under an air mass 1.5 global solar spectrum, a maximum photovoltaic efficiency of 5.43% in the MQW sample over the control sample was observed. It was found that the device and fabrication technology developed in this study are applicable to the realization of solar cells with high open-circuit voltages (V-oc) of 2.86-2.96 V, high short-circuit current densities (J(sc)) of 2.40-2.45 mA/cm(2), and high fill factors of 74.8%-76.5%.

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Extended FF and V-OC Parameterizations for Silicon Solar Cells

Karsten Bothe, David Hinken, Rolf Brendel

Summary: This work focuses on the maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research has significantly reduced recombination in the volume, surfaces, and interfaces of these cells, leading to increased open-circuit voltages and fill factor values. In order to evaluate the extent of these improvements, it is necessary to know the maximum achievable values. Analytical models were used to study the FF-V-OC relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination, and the obtained upper bounds were compared to recently published record values. All values were found to be below the intrinsic limit.

IEEE JOURNAL OF PHOTOVOLTAICS (2023)

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Article Energy & Fuels

Estimation of Photovoltaic Cell Parameters Using Measurement Data of Photovoltaic Module String Currents and Voltages

Shigeomi Hara, Hiroshi Douzono, Makoto Imamura, Tatsuya Yoshioka

Summary: PV models are crucial in simulation analysis and fault diagnosis, with the SDM being the most used model. The actual parameters of PV cells need to be estimated due to environmental changes, and a method is proposed based on measured data.

IEEE JOURNAL OF PHOTOVOLTAICS (2022)

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Proceedings Paper Engineering, Electrical & Electronic

Open Circuit (OC) and Short Circuit (SC) IGBT Switch Fault Detection in Three-Phase Standalone Photovoltaic Inverters Using Shallow Neural Networks

Shyamal Shivneel Chand, Rahul Ranjeev Kumar, Ravneel Prasad, Maurizio Cirrincione, Krish Kumar Raj

Summary: This paper presents a reliable technique for detecting IGBT open-circuit and short-circuit switch faults in a standalone photovoltaic two-level inverter using a shallow neural network. The technique involves applying the extended park vector approach (EVPA) and Principal Component Analysis (PCA) to extract features from the three-phase currents, followed by an ablation study and data normalization. The shallow neural network with tangent-sigmoid activation achieved the highest test-set accuracy among the classifiers tested.

2022 25TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2022) (2022)

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InxGa1-xN-GaN-Based Solar Cells With a Multiple-Quantum-Well Structure on SiCN-Si(111) Substrates

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

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Extended FF and V-OC Parameterizations for Silicon Solar Cells

Estimation of Photovoltaic Cell Parameters Using Measurement Data of Photovoltaic Module String Currents and Voltages

Open Circuit (OC) and Short Circuit (SC) IGBT Switch Fault Detection in Three-Phase Standalone Photovoltaic Inverters Using Shallow Neural Networks

InxGa1-xN-GaN-Based Solar Cells With a Multiple-Quantum-Well Structure on SiCN-Si(111) Substrates

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Keywords

Categories

Funding

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Reagent

Authors

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Reviews

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Recommended

Extended FF and V-OC Parameterizations for Silicon Solar Cells

Estimation of Photovoltaic Cell Parameters Using Measurement Data of Photovoltaic Module String Currents and Voltages

Open Circuit (OC) and Short Circuit (SC) IGBT Switch Fault Detection in Three-Phase Standalone Photovoltaic Inverters Using Shallow Neural Networks

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