A 65 nm 1 Gb 2b/cell NOR Flash With 2.25 MB/s Program Throughput and 400 MB/s DDR Interface

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Title
A 65 nm 1 Gb 2b/cell NOR Flash With 2.25 MB/s Program Throughput and 400 MB/s DDR Interface
Authors
Keywords
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Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 43, Issue 1, Pages 132-140
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-01-30
DOI
10.1109/jssc.2008.916028

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