Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 19, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2266321
Keywords
Differential phase-shift keying; electrooptic modulators; gallium arsenide; optical modulation; optical waveguides; semiconductor waveguides
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We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/sDQPSK modulator are presented.
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