GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 $\mu$m

Published 2009 View Full Article

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Title
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 $\mu$m
Authors
Keywords
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Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 3, Pages 933-940
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-04-24
DOI
10.1109/jstqe.2009.2013361
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