4.7 Article

Far-Field and Near-Field Distribution of GaN-Based Photonic Crystal LEDs With Guided Mode Extraction

Journal

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2015582

Keywords

GaN; LEDs; photonic crystal (PhC)

Funding

  1. National Nanotechnology Program of Taiwan
  2. Ministry of Education (MOE) ATU program
  3. National Science Council of the Republic of China [NSC 952120-M-009-008, NSC 95-2752-E-009-007-PAE, NSC 95-2221-E-009-282]

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The near-field and far-field distribution of GaN LEDs with square photonic crystal (PhC) lattice are experimentally investigated. The optical images of the near-field pattern are obtained from the guided electroluminescent light generated at the center of a special annular structure. For increasing lattice constant, symmetric patterns with varying number of petals according to the symmetry of the PhC are observed. The far-field distribution is studied with GaN-based film-transferred PhC LEDs with the thickness about 1500 nm. Angular-resolved measurements under electrical injection revealed guided modes extraction behavior and polarization based on the Bragg's diffraction with the PhC lattice. Good agreement with the two-dimension free photon band structure is obtained.

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