Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 50, Issue 3, Pages 175-185Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2014.2303075
Keywords
Indium gallium arsenide phosphide; laser modes; nanoscale devices; nanophotonics; photoluminescence; quantum well lasers; semiconductor lasers; spontaneous emission
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Funding
- National Science Foundation (NSF)
- NSF Engineering Research Center for Integrated Access Networks
- Defense Advanced Research Projects Agency
- Office of Naval Research
- Cymer Corporation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1229677] Funding Source: National Science Foundation
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We perform a rigorous analysis of the temperature dependence of the spontaneous emission factor, beta, in subwavelength semiconductor lasers. The analysis combines a recent formulation of the Purcell effect in semiconductor nanolasers with finite-element modeling and established theoretical models for temperature-dependent emission spectra. While the method is general, we apply it to a subwavelength metallo-dielectric nanolaser, and find that beta of the dominant mode decreases sharply below a transition temperature. This result is found for both positive and negative thermo-optic coefficients of the semiconductor material, and occurs because of detuning between the dominant mode and peak emission. The analysis enables better understanding of nanolaser dynamics, as well as the design and characterization of high-beta nanolasers.
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