Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 48, Issue 2, Pages 187-197Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2011.2170961
Keywords
Germanium; modulators; optical interconnects; optoelectronic; quantum wells; quantum-confined Stark effect; silicon
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Funding
- DARPA [HR0011-08-09-0001]
- Oracle
- Interconnect Focus Center
- Focus Center Research Program, a Semiconductor Research Corporation program
- Intel
- Stanford Graduate Fellowship
- National Science Foundation
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With germanium showing significant promise in the design of electroabsorption modulators for full complementary metal oxide semiconductor integration, we present a simple electroabsorption calculator for Ge/SiGe quantum wells. To simulate the quantum-confined Stark effect electroabsorption profile, this simple quantum well electroabsorption calculator (SQWEAC) uses the tunneling resonance method, 2-D Sommerfeld enhancement, the variational method and an indirect absorption model. SQWEAC simulations are compared with experimental data to validate the model before presenting optoelectronic modulator designs for the important communication bands of 1310 nm and 1550 nm. These designs predict operation with very low energy per bit (<30 fJ/bit).
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