Active Region Design for High-Speed 850-nm VCSELs

Title
Active Region Design for High-Speed 850-nm VCSELs
Authors
Keywords
-
Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 46, Issue 4, Pages 506-512
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-02-18
DOI
10.1109/jqe.2009.2038176

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