4.4 Article

Experimental Demonstration of Multi-Bit Optical Buffer Memory Using 1.55-μm Polarization Bistable Vertical-Cavity Surface-Emitting Lasers

Journal

IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 45, Issue 11, Pages 1495-1504

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2009.2029067

Keywords

All-optical switching; optical buffer memory; polarization bistability; vertical-cavity surface-emitting laser (VCSEL)

Funding

  1. SCOPE
  2. Ministry of Education, Culture, Sports, Science, and Technology of Japan [17068003]
  3. Grants-in-Aid for Scientific Research [17068003] Funding Source: KAKEN

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We demonstrate a novel all-optical buffer memory using 1.55-mu m polarization bistable vertical-cavity surface-emitting lasers (VCSELs). A one-bit data is stored as one of two orthogonal polarization states of a VCSEL in this memory. The polarization state is transferred from the VCSEL to another VCSEL which is optically connected in cascade as a shift register. A 4-bit optical buffer memory is constructed using two sets of the shift-register memory connected in parallel. These results show the technical feasibility of multi-bit optical buffer memory.

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