Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress

标题
Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress
作者
关键词
In-Ga-Zn-O (IGZO), Flexible thin film transistor, Polyimide substrates, Mechanical strain, Negative bias illumination stress (NBIS)
出版物
JOURNAL OF ELECTROCERAMICS
Volume 35, Issue 1-4, Pages 106-110
出版商
Springer Nature
发表日期
2015-11-18
DOI
10.1007/s10832-015-0001-2

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